To achieve this, the team employed a weak application of the gate-induced drain leakage (GIDL) erase mechanism in V-NAND ...

Abstract: The corruption of floating gate bits due to high-energy protons is analyzed in 41-nm single level NAND Flash memories. Proton-induced upsets at low doses are not negligible in deeply-scaled ...

Inspired by the vast computing power a universal quantum computer could offer, several candidate systems are being explored. They have allowed experimental demonstrations of quantum gates, operations, ...

Editor's note: Below is the Thursday, June 12 edition of The Corner Table, our weekly newsletter about the Madison dining scene. It's produced by Lindsay Christians and Beck Henreckson.