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SK hynix to reportedly change wafer cutting for its next-gen HBM4 memory and 400-layer NAND flash, as they're becoming ...
NAND flash manufacturers have been implementing production cuts, leading to urgent orders to surge and leaving a supply ...
Abstract: The corruption of floating gate bits due to high-energy protons is analyzed in 41-nm single level NAND Flash memories. Proton-induced upsets at low doses are not negligible in deeply-scaled ...