NAND flash manufacturers have been implementing production cuts, leading to urgent orders to surge and leaving a supply ...

To achieve this, the team employed a weak application of the gate-induced drain leakage (GIDL) erase mechanism in V-NAND ...

Abstract: The corruption of floating gate bits due to high-energy protons is analyzed in 41-nm single level NAND Flash memories. Proton-induced upsets at low doses are not negligible in deeply-scaled ...